APT100GF60JU2 vs APT100GF60JU3 vs APT100GF60B2

 
PartNumberAPT100GF60JU2APT100GF60JU3APT100GF60B2
DescriptionIGBT Modules Power Module - IGBTIGBT Modules Power Module - IGBT
ManufacturerMicrochipMicrochip-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage2.1 V2.1 V-
Continuous Collector Current at 25 C120 A120 A-
Gate Emitter Leakage Current150 nA150 nA-
Pd Power Dissipation416 W416 W-
Package / CaseSOT-227-4SOT-227-4-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingBulkBulk-
Height9.6 mm9.6 mm-
Length38.2 mm38.2 mm-
Operating Temperature Range- 55 C to + 150 C- 55 C to + 150 C-
TechnologySi--
Width25.4 mm25.4 mm-
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity5050-
SubcategoryIGBTsIGBTs-
TradenameISOTOPISOTOP-
Unit Weight1.058219 oz1.058219 oz-
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