APT30GP60B2DLG vs APT30GP60B vs APT30GP60BC

 
PartNumberAPT30GP60B2DLGAPT30GP60BAPT30GP60BC
DescriptionIGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi
ManufacturerMicrochipMicrosemi Corporation-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
PackagingTubeTube-
BrandMicrochip / Microsemi--
Product TypeIGBT Transistors--
Factory Pack Quantity1--
SubcategoryIGBTs--
Series---
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-T-MAX-
Power Max-463W-
Reverse Recovery Time trr---
Current Collector Ic Max-100A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type-PT-
Current Collector Pulsed Icm-120A-
Vce on Max Vge Ic-2.7V @ 15V, 30A-
Switching Energy-260μJ (on), 250μJ (off)-
Gate Charge-90nC-
Td on off 25°C-13ns/55ns-
Test Condition-400V, 30A, 5 Ohm, 15V-
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