APT41F100J vs APT41M80B2 vs APT41M80L

 
PartNumberAPT41F100JAPT41M80B2APT41M80L
DescriptionDiscrete Semiconductor Modules Power FREDFET - MOS8Discrete Semiconductor Modules Power MOSFET - MOS8Discrete Semiconductor Modules FG, MOSFET, 800V, TO-264
ManufacturerMicrochipMicrochipMicrochip
Product CategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
RoHSYYY
ProductPower MOSFET Modules--
Vgs Gate Source Voltage30 V--
Mounting StyleScrew Mount--
Package / CaseSOT-227-4--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTubeTube
ConfigurationSingle--
Height9.6 mm--
Length38.2 mm--
Width25.4 mm--
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Fall Time55 ns--
Id Continuous Drain Current42 A--
Pd Power Dissipation960 W--
Product TypeDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
Rds On Drain Source Resistance180 mOhms--
Rise Time55 ns--
Factory Pack Quantity111
SubcategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
TradenamePOWER MOS 8, ISOTOP--
Typical Turn Off Delay Time235 ns--
Typical Turn On Delay Time55 ns--
Vds Drain Source Breakdown Voltage1 kV--
Vgs th Gate Source Threshold Voltage2.5 V--
Unit Weight1.058219 oz--
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