PartNumber | APT80GP60J | APT80GP60B2G | APT80GP60B2 |
Description | IGBT Modules FG, IGBT, 600V, 80A, SOT-227 | IGBT Modules FG, IGBT, 600V, 80A, TO-247 T-MAX, RoHS | |
Manufacturer | Microchip | Microchip | - |
Product Category | IGBT Modules | IGBT Modules | - |
RoHS | Y | Y | - |
Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
Collector Emitter Saturation Voltage | 2.2 V | 2.2 V | - |
Continuous Collector Current at 25 C | 151 A | 100 A | - |
Gate Emitter Leakage Current | 100 nA | 100 nA | - |
Pd Power Dissipation | 462 W | 1.041 kW | - |
Package / Case | ISOTOP-4 | T-Max-3 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Tube | Tube | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | - |
Mounting Style | SMD/SMT | Through Hole | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | IGBTs | IGBTs | - |