PartNumber | APTGT100A120D1G | APTGT100A1202G | APTGT100A120D1 |
Description | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT | |
Manufacturer | Microchip | Microchip | Microsemi Corporation |
Product Category | IGBT Modules | IGBT Modules | IGBTs - Modules |
RoHS | Y | Y | - |
Configuration | Dual | Dual | Half Bridge |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | - |
Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | - |
Continuous Collector Current at 25 C | 150 A | 140 A | - |
Gate Emitter Leakage Current | 300 nA | 400 nA | - |
Pd Power Dissipation | 520 W | 480 W | - |
Package / Case | D1-7 | SP2-18 | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 125 C | + 100 C | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 50 | 1 | - |
Subcategory | IGBTs | IGBTs | - |
Product | - | IGBT Silicon Modules | - |
Technology | - | Si | - |
Unit Weight | - | 2.821917 oz | - |
Series | - | - | - |
Package Case | - | - | D1 |
Mounting Type | - | - | Chassis Mount |
Supplier Device Package | - | - | D1 |
Input | - | - | Standard |
Power Max | - | - | 520W |
Current Collector Ic Max | - | - | 150A |
Voltage Collector Emitter Breakdown Max | - | - | 1200V |
Current Collector Cutoff Max | - | - | 3mA |
IGBT Type | - | - | Trench Field Stop |
Vce on Max Vge Ic | - | - | 2.1V @ 15V, 100A |
Input Capacitance Cies Vce | - | - | 7nF @ 25V |
NTC Thermistor | - | - | No |