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| PartNumber | ATF-511P8-TR1 | ATF-511P8-BLK | ATF-511P8-TR1G |
| Description | RF JFET Transistors Transistor GaAs High Linearity | RF JFET Transistors Transistor GaAs High Linearity | |
| Manufacturer | Broadcom Limited | Broadcom Limited | AVAGO |
| Product Category | RF JFET Transistors | RF JFET Transistors | IC Chips |
| RoHS | Y | Y | - |
| Transistor Type | EpHEMT | EpHEMT | - |
| Technology | GaAs | GaAs | - |
| Gain | 14.8 dB | 14.8 dB | - |
| Vds Drain Source Breakdown Voltage | 7 V | 7 V | - |
| Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - 5 V to 1 V | - |
| Id Continuous Drain Current | 1 A | 1 A | - |
| Maximum Drain Gate Voltage | - 5 V to + 1 V | - 5 V to + 1 V | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 3 W | 3 W | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | LPCC-8 | LPCC-8 | - |
| Packaging | Reel | Bulk | - |
| Configuration | Single Dual Source | Single Dual Source | - |
| Operating Frequency | 2 GHz | 2 GHz | - |
| Product | RF JFET | RF JFET | - |
| Type | GaAs EpHEMT | GaAs EpHEMT | - |
| Brand | Broadcom / Avago | Broadcom / Avago | - |
| Forward Transconductance Min | 2178 mmho | 2178 mmho | - |
| NF Noise Figure | 1.4 dB | 1.4 dB | - |
| P1dB Compression Point | 30 dBm | 30 dBm | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 3000 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Series | - | ATF | - |
| Unit Weight | - | 0.002399 oz | - |