BC212L vs BC212L-B vs BC212LA

 
PartNumberBC212LBC212L-BBC212LA
DescriptionBipolar Transistors - BJT PNP -50V -300mA HFE/300
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 50 V--
Collector Base Voltage VCBO- 60 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.3 A--
Gain Bandwidth Product fT200 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max300--
Height5.33 mm--
Length5.2 mm--
PackagingBulk--
Width4.19 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current0.3 A--
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Part # AliasesBC212L_NL--
Unit Weight0.008466 oz--
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