BC32740TA vs BC32740BU vs BC327-40

 
PartNumberBC32740TABC32740BUBC327-40
DescriptionBipolar Transistors - BJT PNP -45V -800mA HFE/630Bipolar Transistors - BJT TO-92 PNP GP AMPBipolar Transistors - BJT PNP 50Vcbo 45 Vceo 500mA 625mW Trans
ManufacturerON SemiconductorON SemiconductorCentral Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3 Kinked LeadTO-92-3TO-92-3
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max- 45 V- 45 V45 V
Emitter Base Voltage VEBO- 5 V- 5 V5 V
Collector Emitter Saturation Voltage- 0.7 V- 0.7 V-
Maximum DC Collector Current0.8 A0.8 A0.5 A
Gain Bandwidth Product fT100 MHz100 MHz80 MHz
Minimum Operating Temperature- 55 C- 55 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesBC327BC327BC327
DC Current Gain hFE Max630630-
Height4.7 mm4.7 mm-
Length4.7 mm4.7 mm-
PackagingAmmo PackBulkBulk
Width3.93 mm3.93 mm-
BrandON Semiconductor / FairchildON Semiconductor / FairchildCentral Semiconductor
Continuous Collector Current- 0.8 A- 0.8 A-
Pd Power Dissipation625 mW625 mW625 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity2000100002000
SubcategoryTransistorsTransistorsTransistors
Part # AliasesBC32740TA_NL--
Unit Weight0.008466 oz0.006314 oz0.016000 oz
Collector Base Voltage VCBO--50 V
DC Collector/Base Gain hfe Min--250 at 100 mA, 1 V
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