BC636 vs BC636,116 vs BC636-(E-6325)

 
PartNumberBC636BC636,116BC636-(E-6325)
DescriptionBipolar Transistors - BJT TO-92 PNP GP AMPTRANS PNP 45V 1A TO-92
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 45 V--
Collector Base Voltage VCBO- 45 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.5 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesBC636--
DC Current Gain hFE Max250--
Height5.33 mm--
Length5.2 mm--
PackagingBulk--
Width4.19 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current1 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Unit Weight0.007090 oz--
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