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| PartNumber | BC847BLP4-7B | BC847BLP4-7 | BC847BLP4-7-F |
| Description | Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K | Bipolar Transistors - BJT 250mW 45V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DFN1006H4-3 | DFN-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V | - |
| Collector Base Voltage VCBO | 50 V | 50 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 600 mV | 600 mV | - |
| Maximum DC Collector Current | 200 mA | 200 mA | - |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BC847B | BC847B | - |
| Packaging | Reel | Reel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | 200 | - |
| Pd Power Dissipation | 250 mW | 250 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 10000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| DC Current Gain hFE Max | - | 200 at 2 mA, 5 V | - |
| Height | - | 0.35 mm | - |
| Length | - | 1 mm | - |
| Width | - | 0.6 mm | - |