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| PartNumber | BCM857BV,115 | BCM857BV,315 | BCM857BV |
| Description | Bipolar Transistors - BJT Trans GP BJT PNP 45V 0.1A 6-Pin | Bipolar Transistors - BJT Trans GP BJT PNP 45V 0.1A 6-Pin | SmallSignalBipolarTransistor,0.1AI(C),30VV(BR)CEO,1-Element,PNP,Silicon,TO-236AB |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-666-6 | SOT-666-6 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | - 45 V | - | - |
| Collector Base Voltage VCBO | - 50 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Maximum DC Collector Current | - 200 mA | - | - |
| Gain Bandwidth Product fT | 175 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 450 | - | - |
| Height | 0.6 mm | - | - |
| Length | 1.7 mm | - | - |
| Packaging | Reel | Reel | - |
| Width | 1.3 mm | - | - |
| Brand | Nexperia | Nexperia | - |
| Continuous Collector Current | - 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 4000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000095 oz | - | - |