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| PartNumber | BCW 60D E6327 | BCW60D | BCW60D , NJG1102F1 |
| Description | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | Bipolar Transistors - BJT | |
| Manufacturer | Infineon | NXP | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 32 V | 32 V | - |
| Collector Base Voltage VCBO | 32 V | 32 V | - |
| Emitter Base Voltage VEBO | 6 V | 5 V | - |
| Collector Emitter Saturation Voltage | 0.2 V | - | - |
| Maximum DC Collector Current | 200 mA | 0.1 A | - |
| Gain Bandwidth Product fT | 250 MHz | 125 MHz | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BCW60 | - | - |
| DC Current Gain hFE Max | 630 | - | - |
| Height | 1 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.3 mm | - | - |
| Brand | Infineon Technologies | NXP Semiconductors | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 380 | - | - |
| Pd Power Dissipation | 330 mW | 350 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BCW60DE6327HTSA1 BCW6DE6327XT SP000010549 | - | - |
| Unit Weight | 0.000282 oz | - | - |