BCX70G,215 vs BCX70G /AG vs BCX70G

 
PartNumberBCX70G,215BCX70G /AGBCX70G
DescriptionBipolar Transistors - BJT TRANS GP TAPE-7Bipolar Transistors - BJT SOT-23 NPN GP AMP
ManufacturerNexperia-Fairchild Semiconductor
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO45 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.1 A-0.1 A
Gain Bandwidth Product fT250 MHz-250 MHz
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
DC Current Gain hFE Max120 at 2 mA, 5 V-220
Height1 mm--
Length3 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width1.4 mm--
BrandNexperia--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation250 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesBCX70G T/R--
Unit Weight0.000282 oz-0.002116 oz
Series---
Package Case--TO-236-3, SC-59, SOT-23-3
Mounting Type--Surface Mount
Supplier Device Package--SOT-23-3
Power Max--350mW
Transistor Type--NPN
Current Collector Ic Max--200mA
Voltage Collector Emitter Breakdown Max--45V
DC Current Gain hFE Min Ic Vce--120 @ 2mA, 5V
Vce Saturation Max Ib Ic--550mV @ 1.25mA, 50mA
Current Collector Cutoff Max--20nA
Frequency Transition--125MHz
Pd Power Dissipation--350 mW
Collector Emitter Voltage VCEO Max--45 V
Collector Emitter Saturation Voltage--0.55 V
Collector Base Voltage VCBO--45 V
Emitter Base Voltage VEBO--5 V
Continuous Collector Current--0.2 A
DC Collector Base Gain hfe Min--120
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