BD13610STU vs BD13610S vs BD136-10

 
PartNumberBD13610STUBD13610SBD136-10
DescriptionBipolar Transistors - BJT PNP Si Transistor EpitaxialBipolar Transistors - BJT PNP Si Transistor EpitaxialTransistor: PNP, bipolar, 45V, 1.5A, 12.5W, TO126
ManufacturerON SemiconductorON SemiconductorFAIRCHILD
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-126-3TO-126-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 45 V- 45 V-
Collector Base Voltage VCBO- 45 V- 45 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Collector Emitter Saturation Voltage- 0.5 V- 500 mV-
Maximum DC Collector Current1.5 A- 1.5 A-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBD136BD136-
DC Current Gain hFE Max250250-
Height11 mm11 mm-
Length8 mm8 mm-
PackagingTubeBulk-
Width3.25 mm3.25 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current- 1.5 A- 1.5 A-
DC Collector/Base Gain hfe Min4040-
Pd Power Dissipation12.5 W12.5 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity19202000-
SubcategoryTransistorsTransistors-
Unit Weight0.026843 oz0.026843 oz-
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