BD13616S vs BD136-16 vs BD13616STU

 
PartNumberBD13616SBD136-16BD13616STU
DescriptionBipolar Transistors - BJT PNP Epitaxial SilBipolar Transistors - BJT PNP Silicon TrnsistrBipolar Transistors - BJT PNP Epitaxial Sil
ManufacturerON SemiconductorSTMicroelectronicsON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-126-3SOT-32-3TO-126-3
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max- 45 V45 V- 45 V
Collector Base Voltage VCBO- 45 V45 V- 45 V
Emitter Base Voltage VEBO- 5 V5 V- 5 V
Collector Emitter Saturation Voltage- 0.5 V-- 0.5 V
Maximum DC Collector Current1.5 A1.5 A1.5 A
Minimum Operating Temperature- 55 C- 65 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesBD136BD136BD136
DC Current Gain hFE Max250-250
Height11 mm10.8 mm11 mm
Length8 mm7.8 mm8 mm
PackagingBulkTubeTube
Width3.25 mm2.7 mm3.25 mm
BrandON Semiconductor / FairchildSTMicroelectronicsON Semiconductor / Fairchild
Continuous Collector Current- 1.5 A-- 1.5 A
DC Collector/Base Gain hfe Min40-40
Pd Power Dissipation12.5 W1250 mW12.5 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity200020001920
SubcategoryTransistorsTransistorsTransistors
Part # AliasesBD13616S_NL-BD13616STU_NL
Unit Weight0.026843 oz0.002116 oz0.026843 oz
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