BD13916STU vs BD13916S vs BD13916

 
PartNumberBD13916STUBD13916SBD13916
DescriptionBipolar Transistors - BJT NPN Epitaxial SilBipolar Transistors - BJT NPN Epitaxial SilINSTOCK
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-126-3TO-126-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max80 V80 V-
Collector Base Voltage VCBO80 V80 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.5 V0.5 V-
Maximum DC Collector Current1.5 A1.5 A-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBD139BD139-
DC Current Gain hFE Max250160-
Height1.5 mm1.5 mm-
Length8 mm8 mm-
PackagingTubeBulk-
Width3.25 mm3.25 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current1.5 A1.5 A-
DC Collector/Base Gain hfe Min4040-
Pd Power Dissipation12.5 W12.5 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity19202000-
SubcategoryTransistorsTransistors-
Part # AliasesBD13916STU_NLBD13916S_NL-
Unit Weight0.026843 oz0.026843 oz-
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