BD435 vs BD435 041 vs BD435 100-250 TO-126

 
PartNumberBD435BD435 041BD435 100-250 TO-126
DescriptionBipolar Transistors - BJT NPN Medium Power
ManufacturerSTMicroelectronics--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-32-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max32 V--
Collector Base Voltage VCBO32 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.2 V--
Maximum DC Collector Current4 A--
Gain Bandwidth Product fT3 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesBD435--
Height10.8 mm (Max)--
Length7.8 mm (Max)--
PackagingTube--
Width2.7 mm (Max)--
BrandSTMicroelectronics--
Continuous Collector Current4 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation36 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.002116 oz--
Top