BD537J vs BD537 vs BD537,BD534,BD533,BD538

 
PartNumberBD537JBD537BD537,BD534,BD533,BD538
DescriptionBipolar Transistors - BJT NPN Epitaxial SilBipolar Transistors - BJT NPN General Purpose
ManufacturerON SemiconductorSTMicroelectronics-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYT-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max80 V80 V-
Collector Base Voltage VCBO80 V80 V-
Emitter Base Voltage VEBO5 V5 V-
Maximum DC Collector Current8 A8 A-
Gain Bandwidth Product fT12 MHz12 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Height9.65 mm (Max)9.15 mm (Max)-
Length10.67 mm (Max)10.4 mm (Max)-
PackagingBulkTube-
Width4.83 mm (Max)4.6 mm (Max)-
BrandON Semiconductor / FairchildSTMicroelectronics-
Continuous Collector Current8 A8 A-
DC Collector/Base Gain hfe Min1515-
Pd Power Dissipation50 W50 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity2001-
SubcategoryTransistorsTransistors-
Part # AliasesBD537J_NL--
Unit Weight0.080072 oz0.211644 oz-
Series-BD537-
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