BD538J vs BD538 vs BD538A

 
PartNumberBD538JBD538BD538A
DescriptionBipolar Transistors - BJT PNP Epitaxial SilTRANS PNP 80V 8A TO-220
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 80 V--
Collector Base Voltage VCBO- 80 V--
Emitter Base Voltage VEBO- 5 V--
Maximum DC Collector Current8 A--
Gain Bandwidth Product fT12 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Height9.2 mm--
Length9.9 mm--
PackagingBulk--
Width4.5 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 8 A--
DC Collector/Base Gain hfe Min15--
Pd Power Dissipation50 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity200--
SubcategoryTransistors--
Unit Weight0.080072 oz--
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