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| PartNumber | BFP540ESDH6327XTSA1 | BFP 540ESD H6327 | BFP540ESDH6327XTSA1-CUT TAPE |
| Description | RF Bipolar Transistors RF BIP TRANSISTOR | RF Bipolar Transistors RF BIP TRANSISTOR | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | - |
| RoHS | Y | Y | - |
| Series | BFP540 | BFP540 | - |
| Technology | Si | Si | - |
| Package / Case | SOT-343-4 | SOT-343 | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 540ESD BFP BFP54ESDH6327XT H6327 SP000745298 | BFP540ESDH6327XTSA1 BFP54ESDH6327XT SP000745298 | - |
| Unit Weight | 0.000244 oz | - | - |
| Transistor Type | - | Bipolar | - |
| Transistor Polarity | - | NPN | - |
| DC Collector/Base Gain hfe Min | - | 50 | - |
| Collector Emitter Voltage VCEO Max | - | 4.5 V | - |
| Emitter Base Voltage VEBO | - | 1 V | - |
| Continuous Collector Current | - | 80 mA | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Configuration | - | Single | - |
| Mounting Style | - | SMD/SMT | - |
| DC Current Gain hFE Max | - | 170 | - |
| Operating Frequency | - | 30 GHz | - |
| Type | - | RF Bipolar Small Signal | - |
| Gain Bandwidth Product fT | - | 30 GHz | - |
| Pd Power Dissipation | - | 250 mW | - |