 |  |  | |
| PartNumber | BFP 640FESD H6327 | BFP640FESD/R4S | BFP640FESDH6327XTSA1 |
| Description | RF Bipolar Transistors RF BI | RF TRANS NPN 4.7V 46GHZ 4TSFP | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | RF Bipolar Transistors | - | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - | - |
| Series | BFP640 | - | - |
| Transistor Type | Bipolar | - | NPN |
| Technology | SiGe | - | - |
| Emitter Base Voltage VEBO | 4.8 V | - | - |
| Continuous Collector Current | 50 mA | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSFP-4-1 | - | - |
| Packaging | Reel | - | Tape & Reel (TR) |
| Type | RF Silicon Germanium | - | - |
| Brand | Infineon Technologies | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | BFP640FESDH6327XTSA1 BFP64FESDH6327XT SP000890034 | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Package Case | - | - | 4-SMD, Flat Leads |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 4-TSFP |
| Power Max | - | - | 200mW |
| Current Collector Ic Max | - | - | 50mA |
| Voltage Collector Emitter Breakdown Max | - | - | 4.7V |
| DC Current Gain hFE Min Ic Vce | - | - | 110 @ 30mA, 3V |
| Frequency Transition | - | - | 46GHz |
| Noise Figure dB Typ f | - | - | 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz |
| Gain | - | - | 8B ~ 30.5dB |