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| PartNumber | BFP 740F H6327 | BFP740F | BFP740F E6327 |
| Description | RF Bipolar Transistors RF BIP TRANSISTOR | ||
| Manufacturer | Infineon | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Series | BFP740 | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | - | - |
| Collector Emitter Voltage VCEO Max | 4 V | - | - |
| Emitter Base Voltage VEBO | 1.2 V | - | - |
| Continuous Collector Current | 30 mA | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSFP-4 | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 13 V | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.4 mm | - | - |
| Operating Frequency | 42 GHz | - | - |
| Type | RF Silicon Germanium | - | - |
| Width | 0.8 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Pd Power Dissipation | 160 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | BFP740FH6327XTSA1 BFP74FH6327XT SP000750416 | - | - |
| Unit Weight | 0.000066 oz | - | - |