PartNumber | BSC010NE2LS | BSC010NE2LSATMA1 | BSC010NE2LS , TDA1517P/N |
Description | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | TDSON-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
Id Continuous Drain Current | 100 A | 100 A | - |
Rds On Drain Source Resistance | 1 mOhms | 800 uOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 64 nC | 85 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 96 W | 96 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 85 S | 85 S | - |
Fall Time | 4.4 ns | 4.4 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 6 ns | 6 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 34 ns | 34 ns | - |
Typical Turn On Delay Time | 6.7 ns | 6.7 ns | - |
Part # Aliases | BSC010NE2LSATMA1 BSC1NE2LSXT SP000776124 | BSC010NE2LS BSC1NE2LSXT SP000776124 | - |
Unit Weight | 0.003527 oz | 0.010582 oz | - |