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| PartNumber | BSD214SN H6327 | BSD214SN | BSD214SNL6327 |
| Description | MOSFET SMALL SIGNAL+P-CH | Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon | INFINEON | INFINEON |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.5 A | - | - |
| Rds On Drain Source Resistance | 111 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 700 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 800 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Series | BSD214 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 1.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 4 S | - | - |
| Development Kit | - | - | - |
| Fall Time | 1.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.8 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 6.8 ns | - | - |
| Typical Turn On Delay Time | 4.1 ns | - | - |
| Part # Aliases | BSD214SNH6327XT BSD214SNH6327XTSA1 SP000917656 | - | - |
| Unit Weight | 0.000265 oz | - | - |