 | |  | |
| PartNumber | BSG0811ND | BSG0811NDATMA1 | BSG0811ND(SP001075902) |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET LV POWER MOS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TISON-8 | TISON-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
| Id Continuous Drain Current | 50 A | 50 A | - |
| Rds On Drain Source Resistance | 2.4 mOhms, 700 uOhms | 2.4 mOhms, 700 uOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 16 V | 16 V | - |
| Qg Gate Charge | 8.4 nC, 29 nC | 8.4 nC, 29 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 6.25 W | 6.25 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.15 mm | 1.15 mm | - |
| Length | 6 mm | 6 mm | - |
| Series | OptiMOS 5 | OptiMOS 5 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 5 mm | 5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 46 S, 90 S | 46 S, 90 S | - |
| Fall Time | 1.4 ns, 2.6 ns | 1.4 ns, 2.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 4.7 ns, 4.3 ns | 4.7 ns, 4.3 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 4.3 ns, 8.8 ns | 4.3 ns, 8.8 ns | - |
| Typical Turn On Delay Time | 4.3 ns, 5.6 ns | 4.3 ns, 5.6 ns | - |
| Part # Aliases | BSG0811NDATMA1 SP001075902 | BSG0811ND SP001075902 | - |
| Unit Weight | 0.008113 oz | - | - |