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| PartNumber | BSZ011NE2LS5IATMA1 | BSZ010NE2LS5ATMA1 | BSZ009NE2LS5ATMA1 |
| Description | MOSFET 25V Mosfet 1,1mOhm, PQFN 3x3 | MOSFET 25V Mosfet 1,0mOhm, PQFN 3x3 | MOSFET 25V Mosfet 0,9mOhm, PQFN 3x3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 FL | TSDSON-8 FL | TSDSON-8 FL |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | 25 V |
| Id Continuous Drain Current | 40 A | 40 A | 40 A |
| Rds On Drain Source Resistance | 1.1 mOhms | 1 mOhms | 1.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 16 V | 16 V | 16 V |
| Qg Gate Charge | 17 nC | 21 nC | 92 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 69 W | 69 W | 69 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | OptiMOS | OptiMOS | OptiMOS |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 3 ns | 7.2 ns | 17 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4 ns | 6 ns | 9 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 19.3 ns | 31 ns |
| Typical Turn On Delay Time | 5 ns | 12.6 ns | 7 ns |
| Part # Aliases | BSZ011NE2LS5I SP001730810 | BSZ010NE2LS5 SP002103858 | BSZ009NE2LS5 SP002103848 |