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| PartNumber | BSZ086P03NS3 G | BSZ086P03NS3E G | BSZ086P03NS3 |
| Description | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | TSDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 40 A | 40 A | - |
| Rds On Drain Source Resistance | 6.5 mOhms | 6.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.1 V | 3.1 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 57.5 nC | 57.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 69 W | 69 W | - |
| Configuration | Single | Single | Single Quad Drain Triple Source |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | OptiMOS P3 | OptiMOS P3 | OptiMOS |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 30 S | 30 S | - |
| Fall Time | 8 ns | 8 ns | 8 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 46 ns | 46 ns | 46 ns |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 35 ns | 35 ns | 35 ns |
| Typical Turn On Delay Time | 16 ns | 16 ns | 16 ns |
| Part # Aliases | BSZ086P03NS3GATMA1 BSZ86P3NS3GXT SP000473024 | BSZ086P03NS3EGATMA1 BSZ86P3NS3EGXT SP000473016 | - |
| Unit Weight | 0.003527 oz | 0.003527 oz | - |
| Part Aliases | - | - | BSZ086P03NS3EGATMA1 BSZ086P03NS3EGXT SP000473016 |
| Package Case | - | - | 8-PowerTDFN |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-TSDSON-8 (3.3x3.3) |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 69W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 4785pF @ 15V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 13.5A (Ta), 40A (Tc) |
| Rds On Max Id Vgs | - | - | 8.6 mOhm @ 20A, 10V |
| Vgs th Max Id | - | - | 1.9V @ 105μA |
| Gate Charge Qg Vgs | - | - | 57.5nC @ 10V |
| Pd Power Dissipation | - | - | 69 W |
| Vgs Gate Source Voltage | - | - | 25 V |
| Id Continuous Drain Current | - | - | 13.5 A |
| Vds Drain Source Breakdown Voltage | - | - | - 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 3.1 V |
| Rds On Drain Source Resistance | - | - | 8.6 mOhms |
| Qg Gate Charge | - | - | 21.4 nC |
| Forward Transconductance Min | - | - | 43 S |