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| PartNumber | BSZ088N03MS G | BSZ088N03MSGATMA1 | BSZ088N03MSGATMA1 , TFZV |
| Description | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | MOSFET LV POWER MOS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSDSON-8 | TSDSON-8 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 11 A | - | - |
| Rds On Drain Source Resistance | 8.8 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | OptiMOS 3M | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 2.4 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 4.3 ns | - | - |
| Part # Aliases | BSZ088N03MSGATMA1 BSZ88N3MSGXT SP000311509 | BSZ088N03MS BSZ88N3MSGXT G SP000311509 | - |