BUJ302A,127 vs BUJ302A vs BUJ302AD

 
PartNumberBUJ302A,127BUJ302ABUJ302AD
DescriptionBipolar Transistors - BJT NPN 400 V 4 ATrans GP BJT NPN 400V 4A 80000mW 3-Pin(2+Tab) DPAK T/R
ManufacturerWeEn Semiconductors--
Product CategoryBipolar Transistors - BJT--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220AB-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max400 V--
Emitter Base Voltage VEBO19 V--
Collector Emitter Saturation Voltage0.6 V--
Maximum DC Collector Current4 A--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max100--
BrandWeEn Semiconductors--
DC Collector/Base Gain hfe Min25--
Pd Power Dissipation80 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # Aliases934064985127--
Unit Weight0.211644 oz--
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