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| PartNumber | BUK7613-100E,118 | BUK7613-75B,118 | BUK7613-60E,118 |
| Description | MOSFET N-channel TrenchMOS standard level FET | MOSFET HIGH PERF TRENCHMOS | MOSFET N-channel TrenchMOS standard level FET |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 75 V | 60 V |
| Id Continuous Drain Current | 72 A | 75 A | 58 A |
| Rds On Drain Source Resistance | 10.2 mOhms | 13 mOhms | 9.44 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | - | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 69.4 nC | - | 22.9 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 182 W | 157 W | 96 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 34.1 ns | 26 ns | 9.8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 34 ns | 36 ns | 9.2 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 44.8 ns | 55 ns | 21.9 ns |
| Typical Turn On Delay Time | 17.5 ns | 18 ns | 10.8 ns |
| Packaging | - | Reel | Reel |
| Height | - | 4.5 mm | - |
| Length | - | 10.3 mm | - |
| Width | - | 9.4 mm | - |
| Part # Aliases | - | /T3 BUK7613-75B | - |