BUK7K89-100EX vs BUK7K8R7-40EX vs BUK7K8R7-40E

 
PartNumberBUK7K89-100EXBUK7K8R7-40EXBUK7K8R7-40E
DescriptionMOSFET BUK7K89-100E/LFPAK56D/REEL 7MOSFET 2N-CH 40V 30A 56LFPAKRF Bipolar Transistors MOSFET 40V Mosfet Dual N-Channel
ManufacturerNexperiaNXP SemiconductorsNXP Semiconductors
Product CategoryMOSFETFETs - ArraysTransistors - FETs, MOSFETs - Single
RoHSE--
TechnologySiSiSi
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseLFPAK56D-8--
Number of Channels2 Channel-2 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance61 mOhms, 61 mOhms--
Vgs th Gate Source Threshold Voltage2.4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge13.6 nC, 13.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation38 W--
ConfigurationDual-Dual
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101--
PackagingReelDigi-ReelR Alternate PackagingReel
Transistor Type2 N-Channel-2 N-Channel
BrandNexperia--
Fall Time7.3 ns, 7.3 ns-10.3 ns
Product TypeMOSFET--
Rise Time5.9 ns, 5.9 ns-12 ns
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns, 12 ns-13.8 ns
Typical Turn On Delay Time4.6 ns, 4.6 ns-7.4 ns
Series---
Package Case-SOT-1205, 8-LFPAK56SO-8
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-LFPAK56D-
FET Type-2 N-Channel (Dual)-
Power Max-53W-
Drain to Source Voltage Vdss-40V-
Input Capacitance Ciss Vds-1439pF @ 25V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-30A-
Rds On Max Id Vgs-8.5 mOhm @ 15A, 10V-
Vgs th Max Id-4V @ 1mA-
Gate Charge Qg Vgs-21.8nC @ 10V-
Unit Weight--0.017870 oz
Pd Power Dissipation--53 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--30 A
Vds Drain Source Breakdown Voltage--40 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--7 mOhms
Qg Gate Charge--21.8 nC
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