BUXD87T4 vs BUXD87 vs BUXD87-1

 
PartNumberBUXD87T4BUXD87BUXD87-1
DescriptionBipolar Transistors - BJT HIGH POWER NPN SILICON TRANSISTOR
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max450 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.5 A0.5 A-
Gain Bandwidth Product fT20 MHz20 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBUXD87BUXD87-
Height2.4 mm--
Length6.6 mm--
PackagingReelReel-
Width6.2 mm--
BrandSTMicroelectronics--
Continuous Collector Current0.5 A0.5 A-
Pd Power Dissipation20 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-20 W-
Collector Emitter Voltage VCEO Max-450 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-12 at 40 mA at 5 V-
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