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CGH60008D-GP4 vs CGH60015D vs CGH60008D

 
PartNumberCGH60008D-GP4CGH60015DCGH60008D
DescriptionRF JFET Transistors GaN HEMT Die DC-6.0GHz, 8 WattRF JFET Transistors DC-6GHz 15W GaN Gain@ 4GHz 15dBRF JFET Transistors DC-6GHz 8W GaN Gain@ 4GHz 15dB
ManufacturerCree, Inc.Wolfspeed / CreeWolfspeed / Cree
Product CategoryRF JFET TransistorsTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
Transistor TypeHEMTHEMTHEMT
TechnologyGaNGaN SiCGaN SiC
Gain15 dB15 dB15 dB
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage120 V--
Vgs Gate Source Breakdown Voltage- 10 V to 2 V--
Id Continuous Drain Current0.75 A--
Output Power8 W15 W8 W
Maximum Drain Gate Voltage---
Minimum Operating Temperature---
Maximum Operating Temperature---
Pd Power Dissipation---
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseDie--
PackagingWaffleWaffleWaffle
Application---
ConfigurationSingleSingleSingle
Height100 um--
Length820 um--
Operating Frequency4 GHz to 6 GHz4 GHz to 6 GHz4 GHz to 6 GHz
Operating Temperature Range---
ProductGaN HEMT--
Width920 um--
BrandWolfspeed / Cree--
Gate Source Cutoff Voltage---
Class---
Development Kit---
Fall Time---
NF Noise Figure---
P1dB Compression Point---
Product TypeRF JFET Transistors--
Rds On Drain Source Resistance1.6 Ohms--
Rise Time---
Factory Pack Quantity10--
SubcategoryTransistors--
Typical Turn Off Delay Time---
Vgs th Gate Source Threshold Voltage- 3 V--
Package Case-Bare DieBare Die
Pd Power Dissipation---
Id Continuous Drain Current-1.5 A0.75 A
Vds Drain Source Breakdown Voltage-120 V120 V
Vgs th Gate Source Threshold Voltage-- 3 V- 3 V
Rds On Drain Source Resistance-1 Ohms1.6 Ohms
Forward Transconductance Min---
Vgs Gate Source Breakdown Voltage-- 10 V to + 2 V- 10 V to + 2 V
NF Noise Figure---
P1dB Compression Point---
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