 | | | |
| PartNumber | CGHV35060MP | CGHV3510F | CGHV35150 |
| Description | RF JFET Transistors GaN HEMT 2.7-3.1GHz, 60 Watt | ||
| Manufacturer | Cree, Inc. | - | - |
| Product Category | RF JFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | HEMT | - | - |
| Technology | GaN | - | - |
| Gain | 14.5 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 10 V, 2 V | - | - |
| Id Continuous Drain Current | 10.4 A | - | - |
| Output Power | 75 W | - | - |
| Maximum Drain Gate Voltage | 50 V | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 107 C | - | - |
| Pd Power Dissipation | 52 W | - | - |
| Mounting Style | SMD/SMT | - | - |
| Packaging | Reel | - | - |
| Application | S Band Radar and LTE base stations | - | - |
| Configuration | Single | - | - |
| Operating Frequency | 3.5 GHz | - | - |
| Operating Temperature Range | - 40 C to + 107 C | - | - |
| Brand | Wolfspeed / Cree | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | Transistors | - | - |
| Vgs th Gate Source Threshold Voltage | - 3 V | - | - |