CMKT2207 TR vs CMKT2207 vs CMKT2222A

 
PartNumberCMKT2207 TRCMKT2207CMKT2222A
DescriptionBipolar Transistors - BJT Complementary
ManufacturerCentral SemiconductorCEBTRALCentral Semiconductor Corp
Product CategoryBipolar Transistors - BJTTransistors (BJT) - ArraysTransistors (BJT) - Arrays
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363--
Transistor PolarityNPN, PNPNPN PNP-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max40 V, 60 V--
Collector Base Voltage VCBO75 V, 60 V--
Emitter Base Voltage VEBO6 V, 5 V--
Collector Emitter Saturation Voltage1 V, 1.6 V1 V 1.6 V-
Gain Bandwidth Product fT300 MHz, 200 MHz300 MHz 200 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesCMKT22CMKT22CMKT22
DC Current Gain hFE Max300300-
PackagingReelDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging
BrandCentral Semiconductor--
Continuous Collector Current600 mA600 mA-
DC Collector/Base Gain hfe Min75--
Pd Power Dissipation350 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesCMKT2207 PBFREE TR--
Unit Weight0.000212 oz0.000212 oz-
Package Case-6-TSSOP, SC-88, SOT-3636-TSSOP, SC-88, SOT-363
Mounting Type-Surface MountSurface Mount
Supplier Device Package-SOT-363SOT-363
Power Max-350mW350mW
Transistor Type-NPN, PNP Complementary2 NPN (Dual)
Current Collector Ic Max-600mA600mA
Voltage Collector Emitter Breakdown Max-40V, 60V40V
DC Current Gain hFE Min Ic Vce-100 @ 150mA, 10V100 @ 150mA, 10V
Vce Saturation Max Ib Ic-1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA1V @ 50mA, 500mA
Current Collector Cutoff Max-10nA (ICBO)10nA (ICBO)
Frequency Transition-300MHz, 200MHz300MHz
Pd Power Dissipation-350 mW-
Collector Emitter Voltage VCEO Max-40 V 60 V-
Collector Base Voltage VCBO-75 V 60 V-
Emitter Base Voltage VEBO-6 V 5 V-
DC Collector Base Gain hfe Min-75-
Tradename--CMKT2
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