CMLT3904E vs CMLT3904EG TR vs CMLT3904E TR

 
PartNumberCMLT3904ECMLT3904EG TRCMLT3904E TR
DescriptionBipolar Transistors - BJT NPN Complementary EnhancedBipolar Transistors - BJT NPN Complementary EnhancedTRANS 2NPN 40V 0.2A SOT563
ManufacturerCentral SemiconductorCentral SemiconductorCentral Semiconductor Corp
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Arrays
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6SOT-563-
Transistor PolarityNPNNPN-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max40 V40 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage0.1 V--
Maximum DC Collector Current0.2 A200 mA-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesCMLT39CMLT39-
Height0.58 mm--
Length1.6 mm--
PackagingReelReelDigi-ReelR Alternate Packaging
Width1.2 mm--
BrandCentral SemiconductorCentral Semiconductor-
Continuous Collector Current0.45 A--
DC Collector/Base Gain hfe Min9090 at 100 uA, 1 V-
Pd Power Dissipation350 mW350 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Part # AliasesCMLT3904E TRCMLT3904EG PBFREE TR-
Unit Weight0.000106 oz0.000106 oz-
Technology-Si-
DC Current Gain hFE Max-240 at 100 uA, 1 V-
Package Case--SOT-563, SOT-666
Mounting Type--Surface Mount
Supplier Device Package--SOT-563
Power Max--150mW
Transistor Type--2 NPN (Dual)
Current Collector Ic Max--200mA
Voltage Collector Emitter Breakdown Max--40V
DC Current Gain hFE Min Ic Vce--30 @ 100mA, 1V
Vce Saturation Max Ib Ic--100mV @ 5mA, 50mA
Current Collector Cutoff Max---
Frequency Transition--300MHz
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