CMPT918 TR vs CMPT918 vs CMPT930

 
PartNumberCMPT918 TRCMPT918CMPT930
DescriptionBipolar Transistors - BJT NPN Gen Pur Switch
ManufacturerCentral SemiconductorCentral Semiconductor CorpCentral Semiconductor Corp
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RFTransistors (BJT) - Single, Pre-Biased
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max15 V--
Collector Base Voltage VCBO30 V--
Emitter Base Voltage VEBO3 V--
Collector Emitter Saturation Voltage0.4 V0.4 V-
Maximum DC Collector Current0.05 A0.05 A-
Gain Bandwidth Product fT600 MHz600 MHz (Min)-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesCMPT918CMPT918CMPT930
Height0.96 mm--
Length3.05 mm--
PackagingReelDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging
Width1.4 mm--
BrandCentral Semiconductor--
DC Collector/Base Gain hfe Min20 at 3 mA, 1 V--
Pd Power Dissipation350 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesCMPT918 PBFREE TR--
Unit Weight0.000282 oz0.007090 oz-
Package Case-TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting Type-Surface MountSurface Mount
Supplier Device Package-SOT-23SOT-23
Power Max-350mW350mW
Transistor Type-NPNNPN
Current Collector Ic Max-50mA30mA
Voltage Collector Emitter Breakdown Max-15V45V
DC Current Gain hFE Min Ic Vce-20 @ 3mA, 1V100 @ 10μA, 5V
Frequency Transition-600MHz30MHz
Noise Figure dB Typ f-6dB @ 60MHz-
Gain-11dB-
Pd Power Dissipation-350 mW-
Collector Emitter Voltage VCEO Max-15 V-
Collector Base Voltage VCBO-30 V-
Emitter Base Voltage VEBO-3 V-
DC Collector Base Gain hfe Min-20 at 3 mA at 1 V-
Vce Saturation Max Ib Ic--1V @ 500μA, 10mA
Current Collector Cutoff Max--10nA
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