CMRDM3575 TR vs CMRDM3590 vs CMRDM3575

 
PartNumberCMRDM3575 TRCMRDM3590CMRDM3575
DescriptionMOSFET 20V N-Ch P-Ch FET 8.0Vgs 125mWMOSFET DUAL N-CHNL MOSFET
ManufacturerCentral SemiconductorCentral Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-963SOT-963-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-Channel, P-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current160 mA, 140 mA160 mA-
Rds On Drain Source Resistance1.5 Ohms, 4 Ohms3 Ohms-
Vgs th Gate Source Threshold Voltage400 mV, 1 V--
Vgs Gate Source Voltage8 V8 V-
Qg Gate Charge458 pC, 500 pC--
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation125 mW125 mW-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
TradenameATTOminiATTOmini-
PackagingReelReel-
SeriesCMRDMCMRDM-
Transistor Type1 N-Channel, 1 P-Channel2 N-Channel-
BrandCentral SemiconductorCentral Semiconductor-
Forward Transconductance Min1.3 S, 140 mS--
Product TypeMOSFETMOSFET-
Factory Pack Quantity80008000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time85 ns, 100 ns--
Typical Turn On Delay Time25 ns, 35 ns--
Part # AliasesCMRDM3575 PBFREE TRCMRDM3590 TR-
Height-0.5 mm-
Length-1.05 mm-
Product-MOSFET Small Signal-
Width-0.85 mm-
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