CSD16321Q5 vs CSD16321Q5 SIR800DP-T1 vs CSD16321Q5A

 
PartNumberCSD16321Q5CSD16321Q5 SIR800DP-T1CSD16321Q5A
DescriptionMOSFET N-Channel NexFET Power MOSFET
ManufacturerTexas Instruments--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseVSON-CLIP-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current5 A--
Rds On Drain Source Resistance2.4 mOhms--
Vgs th Gate Source Threshold Voltage900 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge14 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation113 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameNexFET--
PackagingReel--
Height1 mm--
Length6 mm--
SeriesCSD16321Q5--
Transistor Type1 N-Channel--
Width5 mm--
BrandTexas Instruments--
Forward Transconductance Min150 S--
Development KitTPS51218EVM-49, TPS40304EVM-353--
Fall Time17 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time9 ns--
Unit Weight0.004141 oz--
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