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| PartNumber | CSD25202W15 | CSD25202W15T | CSD25201W15 |
| Description | MOSFET 20V P-channel NexFET Pwr MOSFET | MOSFET 20V PCh NexFET Pwr MOSFET | MOSFET P-Channel NexFET Pwr MOSFET |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DSBGA-9 | DSBGA-9 | DSBGA-9 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 4 A | 4 A | 4 A |
| Rds On Drain Source Resistance | 52 mOhms | 52 mOhms | 33 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.05 V | 750 mV | - |
| Vgs Gate Source Voltage | 6 V | 6 V | 6 V |
| Qg Gate Charge | 7.5 nC | 5.8 nC | 4.3 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | 1.5 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Reel | Reel |
| Height | 0.62 mm | 0.62 mm | 0.62 mm |
| Length | 1.5 mm | 1.5 mm | 1.5 mm |
| Series | CSD25202W15 | CSD25202W15 | CSD25201W15 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 1.5 mm | 1.5 mm | 1.5 mm |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments |
| Forward Transconductance Min | 16 S | 16 S | 12 S |
| Fall Time | 28 ns | 28 ns | 38 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 12 ns | 11 ns |
| Factory Pack Quantity | 3000 | 250 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 64 ns | 64 ns | 51 ns |
| Typical Turn On Delay Time | 15 ns | 15 ns | 9.5 ns |
| Unit Weight | 0.000071 oz | - | - |