 |  | | |
| PartNumber | CTLDM3590 TR | CTLDM303N-M832DS TR | CTLDM304P-M832DS TR |
| Description | MOSFET SMD Sm Signal Mosfet N-Channel Enh Mode | MOSFET SMD Sm Signal Mosfet Dual N-Ch Enhanced | MOSFET SMD Sm Signal Mosfet Dual P-Ch Enhanced |
| Manufacturer | Central Semiconductor | Central Semiconductor Corp | Central Semiconductor Corp |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TLM3D6D8 | - | - |
| Number of Channels | 1 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 160 mA | - | - |
| Rds On Drain Source Resistance | 3 Ohms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 458 pC | - | - |
| Minimum Operating Temperature | - 65 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 125 mW | - | - |
| Configuration | Single | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
| Series | CTLDM35 | CTLDM30 | CTLDM30 |
| Transistor Type | 1 N-Channel | 2 N-Channel | 2 P-Channel |
| Brand | Central Semiconductor | - | - |
| Forward Transconductance Min | 1.3 S | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | CTLDM3590 PBFREE TR | - | - |
| Package Case | - | 8-TDFN Exposed Pad | 8-TDFN Exposed Pad |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | TLM832DS | TLM832DS |
| FET Type | - | 2 N-Channel (Dual) | 2 P-Channel (Dual) |
| Power Max | - | 1.65W | 1.65W |
| Drain to Source Voltage Vdss | - | 30V | 30V |
| Input Capacitance Ciss Vds | - | 590pF @ 10V | 760pF @ 15V |
| FET Feature | - | Standard | Standard |
| Current Continuous Drain Id 25°C | - | 3.6A | 4.2A |
| Rds On Max Id Vgs | - | 40 mOhm @ 1.8A, 4.5V | 70 mOhm @ 4.2A, 10V |
| Vgs th Max Id | - | 1.2V @ 250μA | 1.3V @ 250μA |
| Gate Charge Qg Vgs | - | 13nC @ 4.5V | 6.4nC @ 4.5V |
| Pd Power Dissipation | - | 1.65 W | 1.65 W |
| Vgs Gate Source Voltage | - | 12 V | 12 V |
| Id Continuous Drain Current | - | 3.6 A | 4.2 A |
| Vds Drain Source Breakdown Voltage | - | 30 V | - 30 V |
| Rds On Drain Source Resistance | - | 40 mOhms | 120 mOhms |
| Qg Gate Charge | - | 13 nC | 6.4 nC |
| Forward Transconductance Min | - | 11.8 S | - |