CY7C1518JV18-300BZXC vs CY7C1518JV18-250BZC vs CY7C1518JV18-300BZC

 
PartNumberCY7C1518JV18-300BZXCCY7C1518JV18-250BZCCY7C1518JV18-300BZC
DescriptionSRAM 4M x 18 1.8V DDR-II (2-Word Burst)SRAM 4M x 18 1.8V DDR-II SRAM (TWO-WRD BURST)SRAM 4M x 18 1.8V DDR-II (2-Word Burst)
ManufacturerCypress SemiconductorCypress SemiconductorCypress Semiconductor
Product CategorySRAMSRAMSRAM
RoHSYNN
Memory Size72 Mbit-72 Mbit
Organization4 M x 18-4 M x 18
Access Time0.45 ns-0.45 ns
Maximum Clock Frequency300 MHz-300 MHz
Interface TypeParallel-Parallel
Supply Voltage Max1.9 V-1.9 V
Supply Voltage Min1.7 V-1.7 V
Supply Current Max1045 mA-1045 mA
Minimum Operating Temperature0 C-0 C
Maximum Operating Temperature+ 70 C-+ 70 C
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseFBGA-165-FBGA-165
Data RateDDR-DDR
Memory TypeDDR-DDR
SeriesCY7C1518JV18CY7C1518JV18CY7C1518JV18
TypeSynchronous-Synchronous
BrandCypress SemiconductorCypress SemiconductorCypress Semiconductor
Number of Ports2-2
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity105105105
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
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