D44H11 vs D44H11 PBFREE vs D44H11 G40VG VW

 
PartNumberD44H11D44H11 PBFREED44H11 G40VG VW
DescriptionBipolar Transistors - BJT NPN Gen Pur SwitchBipolar Transistors - BJT 80Vceo 5.0Vebo 8.0A 16A Icm 20W
ManufacturerSTMicroelectronicsCentral Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleSMD/SMT-
Package / CaseTO-220-3DPAK-3-
Transistor PolarityNPNNPN, PNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max80 V80 V-
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage1 V1 V-
Maximum DC Collector Current20 A--
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesD44H11D44H11-
Height9.15 mm--
Length10.4 mm--
Width4.6 mm--
BrandSTMicroelectronicsCentral Semiconductor-
Continuous Collector Current10 A8 A-
DC Collector/Base Gain hfe Min6040 at 4 A, 1 V-
Pd Power Dissipation50 W1.75 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity1000400-
SubcategoryTransistorsTransistors-
Unit Weight0.211644 oz--
Technology-Si-
Gain Bandwidth Product fT-60 MHz-
Packaging-Bulk-
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