DMA501010R vs DMA502010R vs DMA50201

 
PartNumberDMA501010RDMA502010RDMA50201
DescriptionBipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mmBipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm
ManufacturerPanasonicPanasonicPanasonic Electronic Components
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Arrays
RoHSYY-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSMini-5SMini-5-
Transistor PolarityPNPPNPPNP
ConfigurationDualDualDual
Collector Emitter Voltage VCEO Max- 50 V- 50 V-
Collector Base Voltage VCBO- 60 V--
Emitter Base Voltage VEBO- 7 V--
Collector Emitter Saturation Voltage- 200 mV--
Maximum DC Collector Current- 200 mA--
Gain Bandwidth Product fT150 MHz150 MHz150 MHz
Maximum Operating Temperature+ 85 C+ 150 C+ 150 C
PackagingReelReelDigi-ReelR Alternate Packaging
BrandPanasonicPanasonic-
Continuous Collector Current- 100 mA- 100 mA- 100 mA
DC Collector/Base Gain hfe Min210210-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Series---
Package Case--5-SMD, Flat Leads
Mounting Type--Surface Mount
Supplier Device Package--SMini5-F3-B
Power Max--150mW
Transistor Type--2 PNP (Dual)
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--50V
DC Current Gain hFE Min Ic Vce--210 @ 2mA, 10V
Vce Saturation Max Ib Ic--500mV @ 10mA, 100mA
Current Collector Cutoff Max--100μA
Frequency Transition--150MHz
Collector Emitter Voltage VCEO Max--- 50 V
DC Collector Base Gain hfe Min--210
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