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DMMT3904-TP vs DMMT3904 vs DMMT3904-T

 
PartNumberDMMT3904-TPDMMT3904DMMT3904-T
DescriptionBipolar Transistors - BJT 200mA 40VBipolar Transistors - BJT 200mA 40V
ManufacturerMicro Commercial Components (MCC)-Micro Commercial Co
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Arrays
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-363-6--
Transistor PolarityNPN-NPN
ConfigurationDual-Dual
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.2 A-0.2 A
Gain Bandwidth Product fT300 MHz-300 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesDMMT39-DMMT39
Height1.1 mm--
Length2.2 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width1.35 mm--
BrandMicro Commercial Components (MCC)--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz-0.000212 oz
Package Case--6-TSSOP, SC-88, SOT-363
Mounting Type--Surface Mount
Supplier Device Package--SOT-363
Power Max--200mW
Transistor Type--2 NPN (Dual)
Current Collector Ic Max--200mA
Voltage Collector Emitter Breakdown Max--40V
DC Current Gain hFE Min Ic Vce--100 @ 10mA, 1V
Vce Saturation Max Ib Ic--300mV @ 5mA, 50mA
Current Collector Cutoff Max---
Frequency Transition--300MHz
Pd Power Dissipation--200 mW
Collector Emitter Voltage VCEO Max--40 V
Collector Base Voltage VCBO--60 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--40
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