DMMT3906-7-F vs DMMT3906-TP vs DMMT3906

 
PartNumberDMMT3906-7-FDMMT3906-TPDMMT3906
DescriptionBipolar Transistors - BJT PNP BIPOLARBipolar Transistors - BJT 200mA 40V
ManufacturerDiodes IncorporatedMicro Commercial Components (MCC)Diodes Incorporated
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Arrays
RoHSYY-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-26-6SOT-363-6-
Transistor PolarityPNPPNPPNP
ConfigurationDualDualDual
Collector Emitter Voltage VCEO Max- 40 V40 V-
Collector Base Voltage VCBO- 40 V40 V-
Emitter Base Voltage VEBO- 5 V5 V-
Collector Emitter Saturation Voltage- 400 mV-- 400 mV
Maximum DC Collector Current- 200 mA0.2 A- 200 mA
Gain Bandwidth Product fT250 MHz250 MHz250 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesDMMT3906DMMT39DMMT3906
Height1.1 mm1.1 mm-
Length3 mm2.2 mm-
PackagingReelReelDigi-ReelR Alternate Packaging
Width1.6 mm1.35 mm-
BrandDiodes IncorporatedMicro Commercial Components (MCC)-
DC Collector/Base Gain hfe Min30 at - 100 mA, - 1 V60-
Pd Power Dissipation225 mW200 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.001058 oz0.000212 oz0.001058 oz
Package Case--SOT-23-6
Mounting Type--Surface Mount
Supplier Device Package--SOT-26
Power Max--225mW
Transistor Type--2 PNP (Dual) Matched Pair
Current Collector Ic Max--200mA
Voltage Collector Emitter Breakdown Max--40V
DC Current Gain hFE Min Ic Vce--100 @ 10mA, 1V
Vce Saturation Max Ib Ic--400mV @ 5mA, 50mA
Current Collector Cutoff Max---
Frequency Transition--250MHz
Pd Power Dissipation--225 mW
Collector Emitter Voltage VCEO Max--- 40 V
Collector Base Voltage VCBO--- 40 V
Emitter Base Voltage VEBO--- 5 V
DC Collector Base Gain hfe Min--30 at - 100 mA - 1 V
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