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| PartNumber | DMN10H170SFG-7 | DMN10H170SFG-13 | DMN10H170SFG |
| Description | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerDI3333-8 | PowerDI3333-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 2.9 A | 8.5 A | - |
| Rds On Drain Source Resistance | 122 mOhms | 99 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 14.9 nC | 14.9 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2 W | 2 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMN10 | DMN10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | 4.4 S | - | - |
| Fall Time | 3.4 ns | 3.4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.3 ns | 2.3 ns | - |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 13.9 ns | 13.9 ns | - |
| Typical Turn On Delay Time | 4.4 ns | 4.4 ns | - |
| Unit Weight | 0.002540 oz | - | - |