 |  |  | |
| PartNumber | DMN2400UFDQ-13 | DMN2400UFD-7 | DMN2400UFDQ |
| Description | MOSFET 20V N-Ch Enh FET VL Gate 1.0V | MOSFET N-Ch Enh Mode FET 1.0V Max 0.4W Pd | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | U-DFN1212-3 | X1-DFN1212-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Series | DMN2400 | DMN24 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 10000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.000176 oz | 0.000035 oz | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 900 mA | - |
| Rds On Drain Source Resistance | - | 350 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 450 mV | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Qg Gate Charge | - | 500 pC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 400 mW | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 10.54 ns | - |
| Rise Time | - | 7.28 ns | - |
| Typical Turn Off Delay Time | - | 13.74 ns | - |
| Typical Turn On Delay Time | - | 4.06 ns | - |