DMN2400UFDQ-7 vs DMN2400UFDQ-13 vs DMN2400UFDQ

 
PartNumberDMN2400UFDQ-7DMN2400UFDQ-13DMN2400UFDQ
DescriptionMOSFET 20V N-Ch Enh FET VL Gate 1.0VMOSFET 20V N-Ch Enh FET VL Gate 1.0V
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseU-DFN1212-3U-DFN1212-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current900 mA--
Rds On Drain Source Resistance350 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage12 V--
Qg Gate Charge500 pC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation800 mW--
ConfigurationSingleSingle-
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
SeriesDMN2400DMN2400-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time10.54 ns--
Product TypeMOSFETMOSFET-
Rise Time7.28 ns--
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13.74 ns--
Typical Turn On Delay Time4.06 ns--
Unit Weight0.000176 oz0.000176 oz-
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