PartNumber | DMN2400UFDQ-7 | DMN2400UFDQ-13 | DMN2400UFDQ |
Description | MOSFET 20V N-Ch Enh FET VL Gate 1.0V | MOSFET 20V N-Ch Enh FET VL Gate 1.0V | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | U-DFN1212-3 | U-DFN1212-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 900 mA | - | - |
Rds On Drain Source Resistance | 350 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Qg Gate Charge | 500 pC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 800 mW | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | - |
Series | DMN2400 | DMN2400 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Fall Time | 10.54 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7.28 ns | - | - |
Factory Pack Quantity | 3000 | 10000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 13.74 ns | - | - |
Typical Turn On Delay Time | 4.06 ns | - | - |
Unit Weight | 0.000176 oz | 0.000176 oz | - |