DMN3007LSS-13 vs DMN3005LK3 vs DMN3005LK3-13

 
PartNumberDMN3007LSS-13DMN3005LK3DMN3005LK3-13
DescriptionMOSFET 2.5W 16A 30VIGBT Transistors MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W
ManufacturerDiodes Incorporated-DIODES
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSO-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current16 A--
Rds On Drain Source Resistance7 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel-Reel
Height1.5 mm--
Length5.3 mm--
ProductMOSFET Small Signal--
SeriesDMN3007-DMN3005
Transistor Type1 N-Channel-1 N-Channel
Width4.1 mm--
BrandDiodes Incorporated--
Fall Time43.6 ns--
Product TypeMOSFET--
Rise Time14.8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time85.1 ns--
Typical Turn On Delay Time10.3 ns--
Unit Weight0.030018 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--1.68 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--14.5 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--2.5 mOhms
Qg Gate Charge--46.9 nC
Forward Transconductance Min--22 S
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